THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS

Abstract

In this paper, we present high integrity thin oxides grown on the channel implanted substrate (greater-than-or-equal-to 3 x 10(17) cm-3) and heavily doped substrate (greater-than-or-equal-to 1 x 10(20) cm-3) by using a low-temperature wafer loading and N2 pre-annealing process. The presented thin oxide grown on the channel implanted substrate exhibits a very low interface state density (less-than-or-equal-to 1 x 10(10) cm-2 eV-1) and a very high intrinsic dielectric breakdown field (greater-than-or-equal-to 15 MV/cm). It also shows a lower charge trapping rate and interface state generation rate than the conventional thermal oxide. For the thin oxide grown on the heavily-doped substrate by using the proposed recipe, the implantation-induced damage close to the silicon surface can be almost annealed out. The presented heavily-doped oxide shows much better dielectric characteristics, such as the dielectric breakdown field and the charge-to-breakdown, as compared to the conventional heavily-doped oxide.