A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY
| dc.citation.epage | 309 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 307 | en_US |
| dc.citation.volume | 10 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | TSAI, HH | en_US |
| dc.contributor.author | YU, CL | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:48Z | |
| dc.date.available | 2014-12-08T15:05:48Z | |
| dc.date.issued | 1989-07-01 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4339 | |
| dc.identifier.wosnumber | WOS:A1989AD91400008 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY | en_US |
| dc.type | Article | en_US |