Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | en_US | |
| dc.citation.volume | 50 | en_US |
| dc.contributor.author | Chen, Cheng-Chang | en_US |
| dc.contributor.author | Lin, Yung-Hsaing | en_US |
| dc.contributor.author | Shih, M. H. | en_US |
| dc.contributor.author | Lin, Gong-Ru | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:47Z | |
| dc.date.available | 2014-12-08T15:11:47Z | |
| dc.date.issued | 2011-04-01 | en_US |
| dc.description.abstract | We reported the light enhancement from a silicon-nanocrystal-embedded SiO(x) film on a silicon-on-insulator (SOI) substrate in the visible light range. The light emission from the annealed SiO(x) film is one order stronger than the emission from a nonannealed SiO(x) film. Compared with the SiO(x) film on a Si substrate, two-fold enhancement in light emission from the SiO(x) film on a SOI substrate was also observed. The enhancement was attributed to better vertical confinement of optical field in the SiO(x) film on a SOI substrate. (C) 2011 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.50.04DJ09 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.50.04DJ09 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9036 | |
| dc.language.iso | en_US | en_US |
| dc.title | Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate | en_US |
| dc.type | Article | en_US |
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