New curvature-compensation technique for CMOS bandgap reference with sub-1-v operation

Abstract

A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-mu m CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/degrees C from 0 degrees C to 100 degrees C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.