GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD
| dc.citation.epage | 176 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 174 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.author | WU, IC | en_US |
| dc.contributor.author | CHEN, LJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:06Z | |
| dc.date.available | 2014-12-08T15:06:06Z | |
| dc.date.issued | 1987-01-26 | en_US |
| dc.identifier.doi | 10.1063/1.97652 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.97652 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4668 | |
| dc.identifier.wosnumber | WOS:A1987F694200002 | |
| dc.language.iso | en_US | en_US |
| dc.title | GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD | en_US |
| dc.type | Article | en_US |
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