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GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD

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1987-01-26

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10.1063/1.97652

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http://dx.doi.org/10.1063/1.97652
 https://ir.lib.nycu.edu.tw/handle/11536/4668

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期刊論文;;Articles

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