The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs

Abstract

We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μ m CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-κ LaAlO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 nm. The metal-gate/high-κ/GOI p-and n-MOSFETs displayed threshold voltage (V-t) shifts of 30 and 21 mV after 10 MV/cm, 85 ° C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-κ-Si CMOSFETs. An extrapolated maximum voltage of -1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs.