Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates
| dc.citation.epage | 1145 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Pan, Chien-Hung | en_US |
| dc.contributor.author | Chang, Chia-Hao | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:06Z | |
| dc.date.available | 2014-12-08T15:23:06Z | |
| dc.date.issued | 2012-07-01 | en_US |
| dc.description.abstract | The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system. | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16250 | |
| dc.identifier.wosnumber | WOS:000304855400008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InP-based | en_US |
| dc.subject | midinfrared lasers | en_US |
| dc.subject | optically pumped | en_US |
| dc.subject | type-II "W" type quantum wells | en_US |
| dc.title | Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates | en_US |
| dc.type | Article | en_US |