Browsing by Author "Chuang, SH"

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A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection
(1995)
Sun, SC
;
Tsai, MH
;
Chiu, HT
;
Chuang, SH
;
Tsai, CE
Applications of semiconductor nanoparticles in electron transfer, energy transfer and metal ion recognition.
(2004-08-22)
Chou, YH
;
Chiu, HT
;
Chen, CY
;
Cheng, CT
;
Chou, PT
Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.
(2004-08-22)
Chuang, SH
;
Chou, YH
;
Chiu, HT
;
應用化學系
;
Department of Applied Chemistry
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
(1996-05-01)
Tsai, MH
;
Sun, SC
;
Tsai, CE
;
Chuang, SH
;
Chiu, HT
This work investigated the barrier properties of metalorganic chemical-vapor-deposited (CVD) tantalum nitride (TaN) and physical-vapor-deposited (PVD) TaN between Cu and Si. The CVD TaN film had a preferred orientation (200) with a grain size of around 60 nm, while the PVD TaN had a (111) preferred orientation with a grain size of around 20 nm, as determined by transmission electron microscopy (TEM) and x-ray diffraction (XRD) analyses. Degradation study of the Cu/TaN/Si contact system was also performed by sheet resistance measurement, scanning electron microscopy (SEM), XRD, secondary ion mass spectroscopy (SIMS), and shallow junction diodes. These results indicated that the PVD TaN film can act as a better diffusion barrier than the CVD TaN film. The higher thermal stability of PVD TaN than CVD TaN can be accounted by their difference in microstructures. The failure mechanisms of both CVD TaN and PVD TaN films as diffusion barriers between Cu and Si were also discussed. (C) 1996 American Institute of Physics.
Formation of mononuclear nitrido complexes of chromium(VI) and molybdenum(VI); Syntheses and X-ray crystal structures of N Cr(OBu(t))(3) and N Mo(OSiMe(3))(3)(py)
(1996-01-21)
Chiu, HT
;
Chen, YP
;
Chuang, SH
;
Jen, JS
;
Lee, GH
Mononuclear nitrido complexes of Cr and Mo, N=Cr(OBu(t))(3) and N=Mo(OSiMe(3))(3)(py), are synthesized; the chromium complex has an idealized C-3v symmetry while the molybdenum complex has a distorted square-pyramidal geometry with the nitrido ligand at apical position; the N-Cr distance is 1.538(5) Angstrom while the average N-Mo distance is 1.627 Angstrom.
High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
(2003-09-01)
Chien, CH
;
Wang, DY
;
Yang, MJ
;
Lehnen, P
;
Leu, CC
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 390-nm-thick SrBi2Ta2O9 (SBT) ferroelectric film and 8-nm-thick hafnium. oxide (HfO2) layer on silicon substrate have been fabricated and characterized. It is demonstrated for the first time that the MFIS stack exhibits a large memory window of around 1.08 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 18% degradation in the memory window after 10(9) switching cycles. The excellent performance is attributed to the formation of well-crystallized SBT perovskite thin film on top of the HfO2 buffer layer, as evidenced by the distinctive sharp peaks in X-ray diffraction (XRD) spectra. In addition to its relatively high kappa value, HfO2 also serves as a good seed layer for SBT crystallization, making the proposed Pt/SrBi2Ta2O9/HfO2/Si structure ideally suitable for low-voltage and high-performance ferroelectric memories.
Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operation
(2003-05-01)
Wang, DY
;
Chien, CH
;
Chang, CY
;
Leu, CC
;
Yang, JY
The properties of sol-gel-derived 120-nm PbZr0.52Ti0.48O3 thin films crystallized in low-pressure O-2 ambient at 500degreesC have been investigated. it is found that PbZr0.52Ti0.48O3 films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O-2 atmosphere. The remanent polarization (i.e., 2P(r)) for samples annealed in 60 mbar O-2 ambient is as high as 36 muC/cm(2), and the coercive field (2E(C)) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P-E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr0.52Ti0.48O3 films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO2 and H2O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.
Low-temperature solution route to molybdenum nitride
(1998-12-01)
Chiu, HT
;
Chuang, SH
;
Lee, GH
;
Peng, SM
;
應用化學系
Low-temperature solution route to molybdenum nitride
(1998-12-01)
Chiu, HT
;
Chuang, SH
;
Lee, GH
;
Peng, SM
;
應用化學系
Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
(1995-12-01)
Tsai, MH
;
Sun, SC
;
Lee, CP
;
Chiu, HT
;
Tsai, CE
Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a new precursor tertbutylimidotrisdiethyl amidotantalum. The surface morphology and the step coverage of TaN films were characterized by scanning electron microscopy. The film deposited at 450 degrees C had nearly 100% step coverage and the step coverage decreased to 25% for the films deposited at 650 degrees C, The carbon and oxygen concentrations are about 10 at.% in the CVD TaN films, as determined by Auger electron spectroscopy. From Rutherford backscattering spectroscopy and secondary ion mass spectroscopy analysis, TaN films were found to be effective diffusion barriers between aluminum and silicon up to 550 degrees C. The electrical measurements of diode-leakage current indicate that the Al/TaN/Si structure remained stable up to 500 degrees C, after which Al started to diffuse through the TaN layer and resulted in a higher leakage current.
Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen
(2000-10-01)
Chiu, HT
;
Wang, CN
;
Chuang, SH
;
應用化學系
;
Department of Applied Chemistry
Tantalum oxide is a high dielectric material suitable for DRAM applications. CVD results using tert-butyl-imidotris(diethylamido)tantalum precursor are encouraging. AFM (see Figure), XRD, XPS, and Auger indicate that, on annealing, the deposited films crystallize to beta-Ta2O5 with uniform Ta and O distribution. Metal oxide semiconductor (MOS) capacitors fabricated from these films are also evaluated.
Metalorganic chemical vapor deposition of tungsten carbonitride films by bis(tertbutylimido)bis(diethylamido)tungsten.
(2002-04-07)
Chuang, SH
;
Chiu, HT
;
Chou, YH
;
Chang, YH
;
Chen, SF
Metalorganic chemical vapor deposition of tungsten nitride for advanced metallization
(1996-03-04)
Tsai, MH
;
Sun, SC
;
Chiu, HT
;
Chuang, SH
;
電子工程學系及電子研究所
In this study, the physical and electrical properties of tungsten nitride thin films deposited by thermal decomposition of bis(tertbutylimido)bis(tertbutylamido)tungsten have been investigated. The films have an excellent step coverage over high aspect-ratio contact holes as well as a low carbon concentration. Strong W-N double bonds in the precursor preserved the nitrogen atoms during the pyrolysis process. This method subsequently yielded low-resistivity films. A decrease in film resistivity from 4300 to 620 mu Ohm cm corresponded to an increase in the deposition temperature from 500 to 650 degrees C, X-ray diffraction (XRD) and wavelength dispersive spectroscopy (WDS) results indicated that the as-deposited films have face centered cubic (fcc) phase polycrystalline structures with excessive nitrogen atoms. (C) 1996 American Institute of Physics.
Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor
(1996-10-07)
Shyu, SG
;
Wu, JS
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Chuang, SH
;
Chi, KM
;
Sung, YS
A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(eta-C5H5)(CO)(3)WCo(CO)(4)] as a single-source precursor.
Preparation and characterization of new low-dielectric thin-film materials with fluorine.
(2003-03-01)
Chuang, SH
;
Wan, CY
;
Chiu, HT
;
應用化學系
;
Department of Applied Chemistry
Syntheses and characterization of organoimido complexes of niobium(V); Potential CVD precursors
(1998-06-01)
Chiu, HT
;
Lin, JC
;
Chuang, SH
;
Lee, GH
;
Peng, SM
New niobium imido complexes (RN)Nb(NEt2)(3) (R = Pr-n, Pr-i and Bu-t), potential precursors to grow niobium containing thin films by chemical vapor deposition (CVD), were prepared by reacting the corresponding (RN)NbCl(3)py(2) complexes (R = Pr-n, Pr-i and Bu-t; py = pyridine) with LiNEt2 in hydrocarbon solvents. The structures of (RN)NbCl(3)py(2) (R = Pr-i and Bu-t), determined by X-ray crystallography, are mononuclear with distorted octahedral geometries. For each complex, three chloride ligands are cia to the imido ligand and occupy meridional positions. One of two py ligands is cia to and the other is trans to the imido ligand. For ((PrN)-N-i)NbCl(3)py(2), the Nb = NPri bond distance (Angstrom) is 1.733(3) and the angle Nb=N-Pr-i angle (degrees) is 178.0(3). Crystal data: monoclinic, space group P2(1)/n, a = 8.805(2), b = 14.930(4), c = 13.407(3) Angstrom, beta = 93.37(2)degrees, V = 1759.5(7) Angstrom(3), Z = 4, D-c 1.565 g cm(-3). For ((BuN)-N-t)NbCl(3)py(2), the Nb=NBut bond distance (Angstrom) is 1.734(4) and the angle Nb=N-Bu-t angle (degrees) is 174.8(4). Crystal data: monoclinic, space group P2(1)/c, a = 9.609(1), b = 13.591(6), c = 14.615(2) Angstrom, beta = 90.05(1)degrees, V = 1908.5(9) Angstrom(3), Z = 4, D-c = 1.492 g cm(-3).
Syntheses and characterization of organoimido complexes of tantalum; potential single-source precursors to tantalum nitride
(1998)
Chiu, HT
;
Chuang, SH
;
Tsai, CE
;
Lee, GH
;
Peng, SM
New single-source precursor to tantalum nitride thin films, ((BuN)-N-t)Ta(NEt2)(3), and related complexes, (RN)Ta(NEt2)(3) (R = Pr-i and Pr-n), were prepared by reacting corresponding (RN)TaCl(3)py(2) complexes (R = Bu-t, Pr-i and Pr-n) with LiNEt2 in hydrocarbon solvents. The structure of ((BuN)-N-t)TaCl(3)py(2) was determined by X-ray crystallography. (C) 1998 Elsevier-Science Ltd. All rights reserved.
Syntheses of molybdenum nitrido complexes from (NH4)(2)Mo2O7.
(2002-04-07)
Yeng, MY
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Chiu, HT
;
Chuang, SH
;
Lo, CP
;
Peng, SM