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Showing results 61 to 66 of 66 < previous 
Issue DateTitleAuthor(s)
1-Sep-1994A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTIONCHENG, HC; JUANG, MH; LIN, CT; HUANG, LM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1995SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONSJUANG, MH; LIN, CT; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1995SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURESKU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-1994SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENTUENG, SY; CHAO, TS; WANG, PJ; CHEN, WH; CHANG, DC; CHENG, HC; 奈米中心; Nano Facility Center
1-Nov-1994SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICESSU, HP; LIU, HW; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1992SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSINGJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 61 to 66 of 66 < previous