標題: | SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES |
作者: | KU, TK CHEN, MS WANG, CC FENG, MS HSIEH, IJ HUANG, JCM CHENG, HC 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | FIELD-EMISSION TRIODES (FETS);VOLCANO-SHAPED GATE;GATE APERTURE;TIP-TO-GATE HEIGHT;EMITTER SHAPE |
公開日期: | 1-十月-1995 |
摘要: | A new two-dimensional numerical simulation which can accurately reproduce the empirical electrical characteristics of vertical field-emission triodes (FET's) with various gate geometries has been developed. The electrical characteristics of volcano-shaped-gate FET's were simulated for the first time and compared with those of planar-gate ones. Volcano-shaped-gate FET's exhibit significant advantages over planar-gate ones due to their superior current-voltage (I-V) properties and larger tolerance of fabrication error. A reasonable definition of emission area was obtained by applying the non-uniform current density model. For sub-micron gate aperture, the gate current is obvious only if the device structure is deeply tip-recessed. On the basis of the evaluation of the device structures including the tip cone angle, the related tip-to-gate height, the emitter shape, and the shrinkage of gate aperture, a high-aspect-ratio conical emitter with a small tip radius will be the optimum structure of FET's for low-voltage operation. |
URI: | http://hdl.handle.net/11536/1709 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 34 |
Issue: | 10 |
起始頁: | 5789 |
結束頁: | 5796 |
顯示於類別: | 期刊論文 |