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公開日期標題作者
13-十一月-1995BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4CHEN, LP; CHOU, CT; HUANG, GW; TSAI, WC; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
15-十月-1994CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURELIOU, TS; WANG, TH; CHANG, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
15-六月-1995CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLSLIOU, TS; WANG, TH; CHANG, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-六月-1993CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-十月-1993CARRIER-INDUCED ENERGY SHIFT IN GAAS/ALGAAS MULTIPLE-QUANTUM-WELL LASER-DIODESCHEN, PA; JUANG, C; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
15-六月-1994CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-二月-1995CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCECHEN, TP; LEI, TF; LIN, HC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
8-五月-1995CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORSKAO, MJ; HSU, WC; HSU, RT; WU, YH; LIN, TY; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1993CHARACTERISTICS OF LOW-TEMPERATURE AND LOW-ENERGY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2HSIEH, SW; CHANG, CY; HSU, SC; 電子物理學系; 電控工程研究所; Department of Electrophysics; Institute of Electrical and Control Engineering
1-十二月-1995CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD; 電子物理學系; Department of Electrophysics
20-八月-1990CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTORYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1991CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORSWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1994CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-十月-1994CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1993CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMSLIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J; 電控工程研究所; Institute of Electrical and Control Engineering
1-十二月-1995A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICESLIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-十二月-1993COMPRESSIVE AND TENSILE STRAIN EFFECTS ON HOLE TUNNELING IN AN INGAAS/ALLNAS ASYMMETRICAL COUPLED-QUANTUM-WELLCHEN, PA; CHANG, CY; JUANG, C; 電控工程研究所; Institute of Electrical and Control Engineering
1-二月-1995CONTROL OF AS PRECIPITATION IN LOW-TEMPERATURE GAAS BY ELECTRONIC AND ISOELECTRONIC DELTA-DOPINGCHENG, TM; CHANG, CY; HUANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-十月-1993CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESSCHEN, HR; LEE, CP; CHANG, CY; TSAI, KL; TSANG, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1990CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHESWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
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