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Showing results 21 to 40 of 46 < previous   next >
Issue DateTitleAuthor(s)
30-Jan-1992FORMATION OF SELF-ALIGNED COBALT SILICIDE IN NORMAL FLOW NITROGEN FURNACEYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1990HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATIONTSAI, JY; TSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1994HIPEC - HIGH PERFORMANCE EXTERNAL VIRTUAL MEMORY CACHINGLEE, CH; CHEN, MC; CHANG, RC; 資訊工程學系; Department of Computer Science
1-Jun-1992INFLUENCE OF CONTACT TREATMENTS ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW-JUNCTION TITANIUM-BASED CONTACTSLIAUH, HR; TSENG, MF; CHEN, MC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1991INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMSHAUNG, CJ; CHANG, CY; CHEN, MC; TSENG, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Apr-1992INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALINGCHEN, BS; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1993INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; LUR, W; CHU, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Dec-1990LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICONTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1993METALLIZATION OF W/CO-TI/SI AND SIMULTANEOUS FORMATION OF DIFFUSION BARRIER AND SHALLOW COSI2 CONTACT IN NORMAL FLOWING-NITROGEN FURNACEYANG, FM; PENG, JG; HUANG, TS; HUANG, SL; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1988A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOSTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1989A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOSTSUI, BY; CHEN, MC; 電控工程研究所; Institute of Electrical and Control Engineering
15-Jan-1994PHASE-TRANSFORMATION OF MO AND W OVER CO OR ITS ALLOY IN CONTACT WITH SIYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1982POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICONCHEN, MC; SILVESTRI, VJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1980POWER LOSSES AND OPTIMUM OPERATION CONDITIONS OF SILICON QUASI-READ DIODESCHANG, MC; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1979PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICONCHEN, MC; SILVESTRI, VJ; 工學院; College of Engineering
1979PRE-OXIDATION GETTERING OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY THE PHOSPHORUS DIFFUSION PROCESSCHEN, JH; CHEN, MC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jan-1995THE PROCESSING WINDOWS FOR SELECTIVE COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANECHIOU, JC; JUANG, KC; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1978QUASI-STATIC ANALYSIS OF X-BAND DOUBLE-DRIFT LO-HI-LO SILICON IMPATT DIODESCHANG, MC; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Aug-1994ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURETSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-Nov-1992SCHOTTKY-BARRIER HEIGHTS OF THE AMORPHOUS INTERLAYER SI INTERFACES IN TITANIUM THIN-FILMS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 21 to 40 of 46 < previous   next >