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公開日期標題作者
15-二月-1995ENERGY-DEPENDENCE OF THE ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN UNDOPED A-SI-H FILMSCHEN, YE; WANG, FS; TSAI, JW; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1990EXCELLENT THERMAL-STABILITY OF COBALT ALUMINUM-ALLOY SCHOTTKY CONTACTS ON GAAS SUBSTRATESCHENG, HC; WU, CY; SHY, JJ; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
30-七月-1992FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATELIN, CT; JUANG, MH; CHU, CH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-四月-1992FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALINGJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1992FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALINGJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-1994FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMSLIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1-四月-1992FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-1994GRAIN-GROWTH OF LASER-RECRYSTALLIZED POLYCRYSTALLINE AND AMORPHOUS-SILICON FILMSTSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-一月-1987GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHODCHENG, HC; WU, IC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1991GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHODCHENG, HC; JUANG, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1995HIGH-PERFORMANCE NITRIDED OXIDES FABRICATED BY VERY-LOW-PRESSURE NITRIDATION TECHNIQUESU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1995HIGH-PERFORMANCE SUPERTHIN OXIDE/NITRIDE/OXIDE STACKED DIELECTRICS FORMED BY LOW-PRESSURE OXIDATION OF ULTRATHIN NITRIDELIU, HW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATESUENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-1992INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICONJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-七月-1995INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODESTAI, YH; TSAI, JW; CHENG, HC; SU, FC; 奈米中心; Nano Facility Center
1-十月-1995LOW-TEMPERATURE ACTIVATION AND RECRYSTALLIZATION OF B+-IMPLANTED AND BF2+-IMPLANTED LPCVD AMORPHOUS-SI FILMSCHENG, HC; WANG, FS; HUANG, YF; HUANG, CY; TSAI, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1994LOW-TEMPERATURE FORMATION OF PALLADIUM SILICIDED SHALLOW P(+)N JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGYLIN, CT; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1-五月-1995LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATESLIN, CT; MA, KP; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1995MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees CCHENG, KL; LIU, CC; CHENG, HC; LEE, CY; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 21 到 40 筆資料，總共 66 筆 < 上一頁   下一頁 >