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公開日期標題作者
1-六月-2000Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodesChen, JF; Wang, PY; Wang, JS; Wong, HZ; 電子物理學系; Department of Electrophysics
1-一月-2006Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dotsChen, JF; Hsiao, RS; Hsieh, MF; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-九月-2005Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dotsChen, JF; Hsiao, RS; Chen, YC; Chen, YP; Hsieh, MT; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-六月-2003Effects of causality and joint conditions on method of reverberation-ray matrixChen, JF; Pao, YH; 土木工程學系; Department of Civil Engineering
15-十月-1998Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structuresChen, JF; Wang, PY; Chen, NC; 電子物理學系; Department of Electrophysics
1-二月-1997Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structuresChen, JF; Chen, NC; Wang, PY; Tsai, MH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-十一月-1999Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectricWu, ZC; Wang, CC; Wu, RG; Liu, YL; Chen, PS; Zhu, ZM; Chen, MC; Chen, JF; Chang, CI; Chen, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-2006Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation timeChen, JF; Hsiao, RS; Hung, WK; Wang, JS; Chi, JY; Yu, HC; Su, YK; 電子物理學系; Department of Electrophysics
15-二月-2004High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxyWang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY; 電子物理學系; Department of Electrophysics
1-九月-2004High-efficiency organic electroluminescent device with multiple emitting unitsChang, CC; Hwang, SW; Chen, CH; Chen, JF; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-五月-2005High-performance 30-period quantum-dot infrared photodetectorChou, ST; Lin, SY; Hsiao, RS; Chi, JY; Wang, JS; Wu, MC; Chen, JF; 電子物理學系; Department of Electrophysics
19-十二月-2005Highly efficient white organic electroluminescent devices based on tandem architectureChang, CC; Chen, JF; Hwang, SW; Chen, CH; 電子物理學系; 電子與資訊研究中心; Department of Electrophysics; Microelectronics and Information Systems Research Center
2-三月-1998Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperatureChen, NC; Wang, PY; Chen, JF; 電子物理學系; Department of Electrophysics
1-十一月-2004Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu mWang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM; 電子物理學系; Department of Electrophysics
1-十二月-2005N incorporation into InGaAs cap layer in InAs self-assembled quantum dotsChen, JF; Hsiao, RS; Hsieh, PC; Chen, YJ; Chen, YP; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-十一月-1999Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxyChen, JF; Wang, PY; Wang, JS; Wong, HZ; 電子物理學系; Department of Electrophysics
23-八月-1999Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperatureChen, JF; Wang, JS; Wang, PY; Wong, HZ; 電子物理學系; Department of Electrophysics
18-十月-1999Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wellsChen, JF; Wang, PY; Tsai, CY; Wang, JS; Chen, NC; 電子物理學系; Department of Electrophysics
15-九月-2004Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealingChen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY; 電子物理學系; Department of Electrophysics
1-二月-1998Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAsChen, NC; Wang, PY; Chen, JF; 電子物理學系; Department of Electrophysics
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