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公開日期標題作者
1-三月-2017A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion LayersHsieh, Shang-Hsun; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2006Modeling the well-edge proximity effect in highly scaled MOSFETsSheu, Yi-Ming; Su, Ke-Wei; Tian, Shiyang; Yang, Sheng-Jier; Wang, Chih-Chiang; Chen, Ming-Jer; Liu, Sally; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETsHsieh, Shang-Hsun; Hung, Jo-Chun; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2010A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility UniversalityLin, Da-Wen; Cheng, Ming-Lung; Wang, Shyh-Wei; Wu, Chung-Cheng; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012n型反置層精準量子計算：應變、次能帶、遷移率及三維結構李韋漢; Lee, Wei-Han; 陳明哲; Chen, Ming-Jer; 電子研究所
1-十二月-2008On the Mean Free Path for Backscattering in k(B)T Layer of Bulk Nano-MOSFETsChen, Ming-Jer; Lu, Li-Fang; Hsu, Chih-Yu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2008A parabolic potential barrier-oriented compact model for the kappa T-B layer's width in nano-MOSFETsChen, Ming-Jer; Lu, Li-Fang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-七月-2015Plasmon-enhanced phonon and ionized impurity scattering in doped siliconChen, Ming-Jer; Hsieh, Shang-Hsun; Chen, Chuan-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2014Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped SiliconChen, Ming-Jer; Chen, Chuan-Li; Hsieh, Shang-Hsun; Chang, Li-Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2008Probing a nonuniform two-dimensional electron gas with random telegraph signalsChen, Ming-Jer; Lee, Chien-Chih; Lu, Ming-Pei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2013Probing Long-Range Coulomb Interactions in Nanoscale MOSFETsChen, Ming-Jer; Chang, Li-Ming; Wei, Sih-Yun; Chen, Wan-Li; Yeh, Ting-Hsien; Chen, Chuan-Li; Liao, Yu-Chiao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion modelSheu, Yi-Ming; Yang, Sheng-Jier; Wang, Chih-Chiang; Chang, Chih-Sheng; Chen, Ming-Jer; Liu, Sally; Diaz, Carlos H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2014A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETsChen, Ming-Jer; Tu, Kong-Chiang; Wang, Huan-Hsiung; Chen, Chuan-Li; Lai, Shiou-Yi; Liu, You-Sheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETsChen, Ming-Jer; Chang, Sou-Chi; Kuang, Shin-Jiun; Lee, Chien-Chih; Lee, Wei-Han; Cheng, Kuan-Hao; Zhan, Yi-Hsien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2007Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theoryChen, Ming-Jer; Yan, Shih-Guei; Chen, Rong-Ting; Hsieh, Chen-Yu; Huang, Pin-Wei; Chen, Han-Ping; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide (similar to 1 nm) nMOSFETs and Its TEM EvidenceChen, Ming-Jer; Chang, Li-Ming; Kuang, Shin-Jiun; Lee, Chih-Wei; Hsieh, Shang-Hsun; Wang, Chi-An; Chang, Sou-Chi; Lee, Chien-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D PlasmonsHsieh, Shang-Hsun; Hung, Jo-Chun; Weng, Heng-Jui; Tsai, Ming-Fu; Chiang, Chih-Chi; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012一種新穎自行開發之快速精準量子模擬器用於三維度高應力下矽電洞能帶結構及反置層遷移率之研究李建志; Lee, Chien-Chih; 陳明哲; Chen, Ming-Jer; 電子研究所
2012三維應力引致(001)和(110) p型場效電晶體反置層電洞遷移率變化之研究陳宛勵; Chen, Wan-Li; 陳明哲; Chen, Ming-Jer; 電子研究所
2011利用溫度效應實驗分析奈米級超薄介電層場效電晶體之遠距散射機制光心君; Kuang, Shin-Jiun; 陳明哲; Chen, Ming-Jer; 電子研究所
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