標題: | Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model |
作者: | Sheu, Yi-Ming Yang, Sheng-Jier Wang, Chih-Chiang Chang, Chih-Sheng Chen, Ming-Jer Liu, Sally Diaz, Carlos H. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | dopant diffusion;mechanical stress;strain;shallow trench isolation;MOSFET;modeling;simulation |
公開日期: | 1-八月-2006 |
摘要: | N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage (I-V) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold I-V characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion. |
URI: | http://dx.doi.org/10.1143/JJAP.45.L849 http://hdl.handle.net/11536/11991 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.45.L849 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS |
Volume: | 45 |
Issue: | 29-32 |
起始頁: | L849 |
結束頁: | L851 |
顯示於類別: | 期刊論文 |