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Showing results 21 to 40 of 159 < previous   next >
Issue DateTitleAuthor(s)
1-Jun-2002Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor depositionSung, WJ; Huang, KF; Tseng, TY; 電子物理學系; Department of Electrophysics
1-Dec-2001Deep hole traps created by gamma-ray irradiation of GaInPSung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; 電子物理學系; Department of Electrophysics
16-Sep-1996Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopyWang, YP; Lee, WI; Tseng, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
16-Sep-1996Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopyWang, YP; Lee, WI; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Aug-2002Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin filmsKuo, SY; Chen, CS; Tseng, TY; Chang, SC; Hsieh, WF; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Oct-2002Device modeling of ferroelectric memory field-effect transistor (FeMFET)Lue, HT; Wu, CJ; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2003Device Modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memoryLue, HT; Wu, CJ; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-Jul-2005Dielectric and electrical properties of SrTiO(3+/-y)-(SiO2)(x) thin filmsChou, HY; Chen, TM; Tseng, TY; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
16-Aug-2004Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin filmsJayadevan, KP; Liu, CY; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-May-2000Dielectric relaxation and defect analysis of Ta2O5 thin filmsEzhilvalavan, S; Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-Apr-2002Dielectric tunability of barium strontium titanate films prepared by a sol-gel methodNayak, M; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2004Effect of atmosphere on growth of single crystal zinc oxide nanowiresLi, SY; Lin, P; Lee, CY; Tseng, TY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-Jan-1999Effect of bismuth content on the properties of Sr0.8BixTa1.2 Nb0.9O9+y ferroelectric thin filmsTsai, HM; Lin, P; Tseng, TY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Feb-1999Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitorsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1999Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitorsTsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1998Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitorsTsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1998Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitorsTsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2000Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin filmsTsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997The effect of grain boundary impedance on the power loss of Mn-Zn ferrites over 1 MHzTung, MJ; Tseng, TY; Tsay, MJ; Chang, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 21 to 40 of 159 < previous   next >