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Showing results 41 to 60 of 66 < previous   next >
Issue DateTitleAuthor(s)
1-Oct-1995MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURESCHENG, KL; CHENG, HC; LIU, CC; LEE, C; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1995MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURESCHENG, KL; CHENG, HC; LIU, CC; LEE, C; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1995A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORSSZE, JJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1995A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-MWANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1993A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGYLOU, YS; WU, CY; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1994A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATIONWANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC; 奈米中心; Nano Facility Center
30-Mar-1992NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1992NOVEL EFFECTS OF HEATING RATE ON THE ACTIVATION RECRYSTALLIZATION OF BORON-IMPLANTED SI SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1993NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATESCHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L; 奈米中心; Nano Facility Center
1-Dec-1994NOVEL STRUCTURE FOR MEASURING THE DENSITY-OF-STATE DISTRIBUTION OF HIGH-RESISTIVITY SEMICONDUCTOR-FILMS BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPYCHEN, YE; WANG, FS; TSAI, JW; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1995NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSESMA, KP; LIN, CT; CHENG, HC; 奈米中心; Nano Facility Center
1-Sep-1995NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSESMA, KP; LIN, CT; CHENG, HC; 奈米中心; Nano Facility Center
1-Jun-1995NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIESSU, HP; LIU, HW; WANG, PW; CHENG, PW; JEN, IM; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1991PREPARATION OF FINE-GRAINED BATIO3FAN, YC; CHENG, HC; TSENG, TY; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
30-Aug-1993THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATIONJUANG, MH; LIN, CT; JAN, ST; CHENG, HC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Aug-1992THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESSLOU, YS; WU, CY; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1992THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1994REVERSE ANNEALING OF ARSENIC-IMPLANTED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION (LPCVD) AMORPHOUS-SILICON FILMSTSAI, MJ; WANG, FS; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jul-1994SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALINGJUANG, MH; LIN, CT; CHENG, HC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Jan-1993SHALLOW N(+)P JUNCTION FORMATION BY IMPLANTING P+ IONS INTO THIN CO FILMS AND LASER PROCESSINGCHENG, HC; JUANG, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 41 to 60 of 66 < previous   next >