Browsing by Author Li, Yiming

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Issue DateTitleAuthor(s)
2009Design and Fabrication of Sub-Wavelength Structure on Silicon Nitride for Solar CellsSahoo, Kartika Chandra; Li, Yiming; Lin, Men-Ku; Chang, Edward Yi; Huang, Jin-Hua; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2020Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTsShrestha, Niraj Man; Li, Yiming; Chen, Chao-Hsuan; Sanyal, Indraneel; Tarng, Jenn-Hawn; Chyi, Jen-Inn; Samukawa, Seiji; 交大名義發表; 電機工程學系; 電信工程研究所; National Chiao Tung University; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-Nov-2017Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot SuperlatticeTsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji; 資訊工程學系; Department of Computer Science
1-Jan-2017Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation LayerTsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji; 電信工程研究所; Institute of Communications Engineering
1-Jan-2014Design Optimization of 16-nm Bulk FinFET Technology via Geometric ProgrammingSu, Ping-Hsun; Li, Yiming; 傳播研究所; Institute of Communication Studies
15-Dec-2008Design optimization of a current mirror amplifier integrated circuit using a computational statistics techniqueLi, Yiming; Li, Yih-Lang; Yu, Shao-Ming; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
1-Aug-2015Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD ApplicationsChiang, Chien-Hsueh; Li, Yiming; 傳播研究所; 電機資訊學士班; Institute of Communication Studies; Undergraduate Honors Program of Electrical Engineering and Computer Science
1-May-2015Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET DevicesSu, Ping-Hsun; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-May-2010Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cellLee, Kuo-Fu; Li, Yiming; Li, Tien-Yen; Su, Zhong-Cheng; Hwang, Chin-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-Jan-2014Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility TransistorShrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
3-Jul-2013Device Simulation-Based Multiobjective Evolutionary Algorithm for Process Optimization of Semiconductor Solar CellsLi, Yiming; Chen, Yu-Yu; Chen, Chieh-Yang; Shen, Cheng-Han; Cheng, Hui-Wen; Lo, I-Hsiu; Chen, Chun-Nan; 資訊工程學系; Department of Computer Science
2015Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch TechnologyLee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan; 電子物理學系; 電機學院; 電子工程學系及電子研究所; Department of Electrophysics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
2007Discrete dopant fluctuated 20nm/15nm-gate planar CMOSYang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D.; 電信工程研究所; Institute of Communications Engineering
1-Jun-2008Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOSLi, Yiming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
2007Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI DevicesLi, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching; 電信工程研究所; Institute of Communications Engineering
2007Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFETLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; 電信工程研究所; Institute of Communications Engineering
1-Apr-2008Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistorsLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
1-Apr-2009Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field-Effect TransistorsLi, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
15-Oct-2007Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devicesLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
2010Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant MaterialHan, Ming-Hung; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering