1. 目前位置：

瀏覽 的方式： 作者 Cheng, C. H.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 43 到 62 筆資料，總共 72 筆 < 上一頁   下一頁 >
公開日期標題作者
2007Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealingHuang, C. C.; Cheng, C. H.; Chin, Albert; Chou, C. P.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer LayerCheng, C. H.; Chen, P. C.; Wu, Y. H.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric IncorporationZheng, Z. W.; Cheng, C. H.; Chen, Y. C.; 光電系統研究所; Institute of Photonic System
1-六月-2009Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow JunctionsLin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2009Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOTLin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2015Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold SwingCheng, C. H.; Chou, K. I.; Hsu, H. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-六月-2012Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between trapsShaposhnikov, A. V.; Perevalov, T. V.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Nano-crystallized titanium oxide resistive memory with uniform switching and long enduranceCheng, C. H.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAMKruchinin, V. N.; Aliev, V. Sh.; PerevaIov, T. V.; Islamov, D. R.; Gritsenko, V. A.; Prosvirin, I. P.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-四月-2013Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance DistributionChou, K. I.; Cheng, C. H.; Zheng, Z. W.; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Novel Ultra-Low Power RRAM with Good Endurance and RetentionCheng, C. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-十月-2018On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate StackLin, M. H.; Fan, C. C.; Hsu, H. H.; Liu, C.; Chen, K. M.; Cheng, C. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十二月-2014Origin of traps and charge transport mechanism in hafniaIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
29-十二月-2014Percolation conductivity in hafnium sub-oxidesIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
2011The Reliability Study and Device Modeling for p-HEMT Microwave Power TransistorsLiu, S. L.; Chang, H. M.; Chang, T.; Kao, H. L.; Cheng, C. H.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive MemoriesZheng, Z. W.; Hsu, H. H.; Chen, P. C.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Size-Dependent Trapping Effect in Nano-Dot Non-Volatile MemoryTsai, C. Y.; Cheng, C. H.; Chang, T. Y.; Chou, K. Y.; Chin, Albert; Yeh, F. S.; 電機工程學系; Department of Electrical and Computer Engineering
31-一月-2011Stacked GeO/SrTiO(x) Resistive Memory with Ultralow Resistance CurrentsCheng, C. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-一月-2011Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance CurrentsCheng, C. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 43 到 62 筆資料，總共 72 筆 < 上一頁   下一頁 >