1. 目前位置：

瀏覽 的方式： 作者 CHENG, HC

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 61 到 66 筆資料，總共 66 筆 < 上一頁 
公開日期標題作者
1-九月-1994A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTIONCHENG, HC; JUANG, MH; LIN, CT; HUANG, LM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1995SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONSJUANG, MH; LIN, CT; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURESKU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-1994SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENTUENG, SY; CHAO, TS; WANG, PJ; CHEN, WH; CHANG, DC; CHENG, HC; 奈米中心; Nano Facility Center
1-十一月-1994SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICESSU, HP; LIU, HW; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1992SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSINGJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 61 到 66 筆資料，總共 66 筆 < 上一頁