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公開日期標題作者
1-四月-2006AC power loss and signal coupling in very large scale integration backend interconnectsChen, CC; Kao, HL; Liao, CC; Chin, A; McAlister, SP; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2004Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gatesYu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-四月-2002Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory applicationChen, SY; Sun, CL; Chen, SB; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2005Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETsLiao, CC; Yu, DS; Cheng, CF; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2005Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodesMihaychuk, JG; Denhoff, MW; McAlister, SP; McKinnon, WR; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bondingWu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substratesSun, CL; Chen, SY; Yang, MY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2002Characterization of Si/SiGe heterostructures on Si formed by solid phase reactionHuang, CH; Chin, A; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The copper contamination effect of Al2O3 gate dielectric on SiLiao, CC; Cheng, CF; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Cu contamination effect in oxynitride gate dielectricsLin, YH; Pan, FM; Liao, YC; Chen, YC; Hsieh, IJ; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1999Deuterium effect on stress-induced leakage currentLin, BC; Cheng, YC; Chin, A; Wang, T; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier heightHuang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-三月-2002Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered SiSun, CL; Chen, SY; Chen, SB; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2000The effect of copper on gate oxide integrityLin, YH; Wu, YH; Chin, A; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETsYu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
25-一月-1999The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on SiWu, YH; Chen, WJ; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1998The effect of native oxide on thin gate oxide integrityChin, A; Lin, BC; Chen, WJ; Lin, YB; Thai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-五月-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2003Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O-3 thin films on Al2O3 buffered Si for one-transistor memory applicationsSun, CL; Hsu, JJ; Chen, SY; Chin, A; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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