標題: Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si
作者: Sun, CL
Chen, SY
Chen, SB
Chin, A
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 18-三月-2002
摘要: The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Al2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700 degreesC-950 degreesC increases with increasing annealing temperature. At the highest annealing temperature of 950 degreesC, a large ferroelectric memory window of 13 V is obtained under +/-15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1459115
http://hdl.handle.net/11536/28932
ISSN: 0003-6951
DOI: 10.1063/1.1459115
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 11
起始頁: 1984
結束頁: 1986
顯示於類別:期刊論文


文件中的檔案:

  1. 000174363300043.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。