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公開日期標題作者
1-四月-2014Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitorsQuang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2016HfO2/AIN/ln(0.53)Ga(0.47)As MOS Devices Electrical Properties and Reliability StudiesYi-Chang, Edward; Quang-Ho Luc; Huy-Binh Do; Chang, Po-Chun; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2017Performance Improvement of InGaAs FinFET Using NH3 TreatmentChang, Edward Yi; Quang-Ho Luc; Huy-Binh Do; Lin, Yueh-Chin; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
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