Performance Improvement of InGaAs FinFET Using NH3 Treatment

Abstract

A marked improvement in the performance and reliability of In0.53Ga0.47As FinFETs have been demonstrated by applying an in situ remote-plasma gas (PRP) treatment. Under nitrogen passivation effects, an excellent immunity to short channel effects (SCEs) is shown for the scaled In0.53Ga0.47As FinFETs. The positive bias temperature instability (PBTI) measurements indicate that the NH3 plasma-treated In0.53Ga0.47As FinFETs are quite reliable with a small threshold voltage shift and a long-term operation. These results suggest that the in situ PRP treatment could be a key process for high-k dielectric technology for the sub-nanometer III-V MOS related devices.