標題: | High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels |
作者: | Lu, Yi-Hsien Kuo, Po-Yi Lin, Je-Wei Wu, Yi-Hong Chen, Yi-Hsuan Chao, Tien-Sheng 電子物理學系 Department of Electrophysics |
關鍵字: | FinFETs;L-fin;multiple gate;NH3 plasma;Ni salicidation;poly-Si thin-film transistors (TFTs) |
公開日期: | 1-二月-2012 |
摘要: | For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) similar to 190 mV/dec, and a high on/off current ratio (I-ON/I-OFF) > 10(6) (V-D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS similar to 148 mV/dec and I-ON/I-OFF similar to 10(7). After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS similar to 132 mV/dec, higher I-ON/I-OFF > 10(7), and threshold voltage (V-TH) similar to 0.036 V. |
URI: | http://dx.doi.org/10.1109/LED.2011.2175357 http://hdl.handle.net/11536/15235 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2175357 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 2 |
起始頁: | 215 |
結束頁: | 217 |
顯示於類別: | 期刊論文 |