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Issue DateTitleAuthor(s)
2008AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941VLo, M. H.; Li, Z. Y.; Chen, J. R.; Ko, T. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
2007Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bendingWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2009Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77KKuo, H. C.; Chen, S. W.; Kao, T. T.; Kao, C. C.; Chen, J. R.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
15-Nov-2008Characteristics of a-plane GaN with the SiN(x) insertion layer grown by metal-organic chemical vapor depositionKo, T. S.; Wang, T. C.; Huang, H. M.; Chen, J. R.; Chen, H. G.; Chu, C. P.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
15-Nov-2008Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor depositionKo, T. S.; Wang, T. C.; Huang, H. M.; Chen, J. R.; Chen, H. G.; Chu, C. P.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
2007Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistorsWang, M. C.; Chang, T.-C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-Mar-2010Effect of Laser Welding on Properties of Dissimilar Joint of Al-Mg-Si and Al-Mn Aluminum AlloysChang, C. C.; Chou, C. P.; Hsu, S. N.; Hsiung, G. Y.; Chen, J. R.; 機械工程學系; Department of Mechanical Engineering
1-Mar-2010Growth and characterization of a-plane Al(x)Ga(1-x)N alloys by metalorganic chemical vapor depositionHuang, H. M.; Ling, S. C.; Chen, J. R.; Ko, T. S.; Li, J. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-Mar-2010Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor depositionHuang, H. M.; Ling, S. C.; Chen, J. R.; Ko, T. S.; Li, J. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; 照明與能源光電研究所; 光電工程學系; 光電工程研究所; Institute of Lighting and Energy Photonics; Department of Photonics; Institute of EO Enginerring
1-May-2009Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg(+) Implanted Current Blocking LayerTsai, Min-An; Yu, Peichen; Chen, J. R.; Huang, J. K.; Chiu, C. H.; Kuo, H. C.; Lu, T. C.; Lin, S. H.; Wang, S. C.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-May-2009Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg+ Implanted Current Blocking LayerTsai, Min-An; Yu, Peichen; Chen, J. R.; Huang, J. K.; Chiu, C. H.; Kuo, H. C.; Lu, T. C.; Lin, S. H.; Wang, S. C.; 電子物理學系; 光電工程學系; 光電工程研究所; Department of Electrophysics; Department of Photonics; Institute of EO Enginerring
2007The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stressWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Lin, Y. P.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2010Investigation of Efficiency Droop in Blue InGaN/GaN Light-Emitting Diodes with Different Well WidthsWang, C. H.; Chiu, C. H.; Chen, J. R.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
1-Nov-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-Nov-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
9-Jul-2007n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
30-Apr-2007Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widthsKo, T. S.; Lu, T. C.; Wang, T. C.; Lo, M. H.; Chen, J. R.; Gao, R. C.; Kuo, H. C.; Wang, S. C.; Shen, J. L.; 光電工程學系; Department of Photonics
1-Nov-2008Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor depositionKo, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L.; 光電工程學系; Department of Photonics
7-May-2007Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistorWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Schottky barrier height for the photo leakage current transformation of a-Si : H TFTsWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
Showing results 1 to 20 of 27  next >