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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2004Effects of base oxide in HfSiO/SiO2 high-k gate stacksWu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacksWu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacksWu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2006HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicideWu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technologyChung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2006Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stackChung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2006Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxideWu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7