HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

標題:	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
作者:	Wu, CH Hung, BF Chin, A Wang, SJ Yen, FY Hou, YT Jin, Y Tao, HJ Chen, SC Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	HfAlON;MOSFET;YbSi
公開日期:	1-六月-2006
摘要:	The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
URI:	http://dx.doi.org/10.1109/LED.2006.874778 http://hdl.handle.net/11536/12203
ISSN:	0741-3106
DOI:	10.1109/LED.2006.874778
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	27
Issue:	6
起始頁:	454
結束頁:	456
顯示於類別：	期刊論文

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