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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Jun-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Linearity and power characteristics of SiGeHBTs at high temperatures for RF applicationsChen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation processChan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodesHuang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Optimized noise and consistent RF model for 0.18 mu m MOSFETsHuang, CH; Li, HY; Chin, A; Liang, V; Chien, SC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulationChin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7