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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
27-Oct-20051.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injectionPeng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC; 光電工程學系; Department of Photonics
1996980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergenceYen, ST; Lin, G; Liu, DC; Tsai, CM; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2002Comparison of 1300 nm quantum well lasers using different material systemsLin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2005Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasersWang, JS; Lin, G; Hsiao, RS; Yang, CS; Lai, CM; Liang, CY; Liu, HY; Chen, TT; Chen, YF; Chi, JY; Chen, JF; 電子物理學系; Department of Electrophysics
1-Dec-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrateFan, JC; Tsai, CM; Chen, KY; Wang, SY; Lin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2001Mode control of vertical-cavity surface-emitting lasers by germanium coatingChiou, SW; Lin, G; Lee, CP; Yang, HP; Sung, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2004Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu mWang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM; 電子物理學系; Department of Electrophysics
1-Mar-2006Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dBChang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC; 光電工程學系; Department of Photonics
29-Sep-2005Singlemode InAs quantum dot photonic crystal VCSELsYang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY; 光電工程學系; Department of Photonics
5-Jun-1997Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-offFan, JC; Chen, KY; Lin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-Jun-1997Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-offFan, JC; Chen, KY; Lin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2002Two-dimensional field analysis of semiconductor lasers with small vertical beam divergenceLin, G; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 14 of 14