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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
1996980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergenceYen, ST; Lin, G; Liu, DC; Tsai, CM; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureLin, G; Yen, ST; Lee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996High quality quantum dots fabricated by molecular beam epitaxyLee, CP; Liu, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1998Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologiesChuang, HF; Lee, CP; Tsai, CM; Liu, DC; Tsang, JS; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1998Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologiesChuang, HF; Lee, CP; Tsai, CM; Liu, DC; Tsang, JS; Fan, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 6 of 6