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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
1994CHARACTERIZATION OF CHEMICAL-MECHANICAL POLISHING DIELECTRICS FOR MULTILEVEL METALLIZATIONSUN, SC; YEH, FL; TIEN, HZ; 奈米中心; Nano Facility Center
1-Oct-1993CHARACTERIZATIONS OF OXIDE GROWN BY N2OCHAO, TS; CHEN, WH; SUN, SC; CHANG, HY; 電控工程研究所; Institute of Electrical and Control Engineering
15-Dec-1994COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUMSUN, SC; TSAI, MH; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
21-Aug-1995METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATIONTSAI, MH; SUN, SC; CHIU, HT; TSAI, CE; CHUANG, SH; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
21-Aug-1995METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATIONTSAI, MH; SUN, SC; CHIU, HT; TSAI, CE; CHUANG, SH; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1994A NOVEL APPROACH FOR LEAKAGE CURRENT REDUCTION OF LPCVD TA(2)O(5) AND TIO(2) FILMS BY RAPID THERMAL N(2)O ANNEALINGSUN, SC; CHEN, TF; 奈米中心; Nano Facility Center
1994RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2OSUN, SC; WANG, LS; YEH, FL; LAI, TS; LIN, YH; 奈米中心; Nano Facility Center
1993THERMAL-OXIDATION OF LIGHTLY-DOPED AND HEAVILY-DOPED SILICON IN PURE N2OSUN, SC; CHANG, HY; 奈米中心; Nano Facility Center
Showing results 1 to 8 of 8