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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
1-Mar-1996The effect of preheating treatment on anodic Al2O3 formed on sputtered Al thin filmsChiu, RL; Chang, PH; Tung, CH; 材料科學與工程學系; Department of Materials Science and Engineering
10-May-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1997A language model based on semantically clustered words in a Chinese character recognition systemLee, HJ; Tung, CH; 資訊工程學系; Department of Computer Science
1-Aug-1997A language model based on semantically clustered words in a Chinese character recognition systemLee, HJ; Tung, CH; 交大名義發表; 資訊工程學系; National Chiao Tung University; Department of Computer Science
1-Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2004N-type Schottky barrier source/drain MOSFET using ytterbium silicideZhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1996Observations of Guinier-Preston zones in an As-deposited Al-1wt.%Si-0.5wt.%Cu thin filmTung, CH; Chiu, RL; Chang, PH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-1996Observations of Guinier-Preston zones in an As-deposited Al-1wt.%Si-0.5wt.%Cu thin filmTung, CH; Chiu, RL; Chang, PH; 材料科學與工程學系; Department of Materials Science and Engineering
1-May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 9 of 9