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Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
18-Oct-2004The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrodeLu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical depositionYang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stackLu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-Dec-2002Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layerHuang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2004HfO2 MIS capacitor with copper gate electrodePerng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2006High-performance poly-silicon TFTs using HfO2 gate dielectricLin, CP; Tsui, BY; Yang, MJ; Huang, RH; Chien, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2003High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memoryChien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY; 交大名義發表; National Chiao Tung University
1-Nov-2005Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatmentLu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2005Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatmentLu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVDYang, MJ; Shieh, J; Hsu, SL; Huang, IJ; Leu, CC; Shen, SW; Huang, TY; Lehnen, P; Chien, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Jun-2005Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substratesHsu, SL; Chien, CH; Yang, MJ; Huang, RH; Leu, CC; Shen, SW; Yang, TH; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 13 of 13