High-performance poly-silicon TFTs using HfO2 gate dielectric

Abstract

High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-kappa (HFO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-kappa gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the O.N-state current of high-kappa. gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (V-th) rolloff property is also demonstrated. All of these results suggest that high-kappa gate dielectric is a good choice for high-performance TFTs.