標題: | High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric |
作者: | Yang, Ming-Jui Chien, Chao-Hsin Lu, Yi-Hsien Luo, Guang-Li Chiu, Su-Ching Lou, Chun-Che Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | hafnium silicate (HfSiOx);high dielectric constant (high-k);polycrystalline-silicon thin-film transistors (poly-Si TFTs) |
公開日期: | 1-十月-2007 |
摘要: | In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium-silicate (HfSiOx) gate dielectric are demonstrated with low-temperature processing. Because of the higher gate-capacitance density, TFTs with HfSiOx. gate dielectric exhibit excellent device performance in terms of higher I-ON/I-OFF current ratio, lower subthreshold swing, and lower threshold voltage (V-th) albeit with slightly higher OFF-state current. More importantly, the mobility of TFTs with HfSiOx gate dielectric is 1.7 times that of TFTs with conventional deposited-SiO2 gate dielectric. |
URI: | http://dx.doi.org/10.1109/LED.2007.904901 http://hdl.handle.net/11536/10279 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.904901 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 10 |
起始頁: | 902 |
結束頁: | 904 |
顯示於類別: | 期刊論文 |