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公開日期標題作者
26-十月-2017Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentYuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-十月-2016Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influencePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-一月-2017Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十二月-2016Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide ElectrodePan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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