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公開日期標題作者
2005An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTsChen, Han-Yu; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistorsHu, Hsin-Hui; Chen, Kun-Ming; Huang, Guo-Wei; Chien, Alex; Cheng, Eric; Yang, Yu-Chi; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2005The determination of S-parameters from the poles of voltage-gain transfer function for RF IC designLu, SS; Lin, YS; Chiu, HW; Chen, YC; Meng, CC; 電信工程研究所; Institute of Communications Engineering
1-三月-2006S-parameters-based high speed signal characterization of Al interconnect on low-k hydrogen silsesquioxane-Si substrateHo, CC; Chiou, BS; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
1-十月-2005A scalable noise de-embedding technique for on-wafer microwave device characterizationCho, MH; Huang, GW; Wang, YH; Wu, LK; 電信工程研究所; Institute of Communications Engineering
1-九月-2007Scalable short-open-interconnect S-Parameter de-embedding method for on-wafer microwave characterization of silicon MOSFETsCho, Ming-Hsiang; Wang, Yueh-Hua; Wu, Lin-Kun; 電信工程研究所; Institute of Communications Engineering