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公開日期標題作者
1-六月-2001Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrierChen, CY; Chang, EY; Chang, L; Chen, SH; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-三月-1997Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor depositionSun, SC; Chen, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate DielectricChen, W. B.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2010High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate DielectricsChen, W. B.; Cheng, C. H.; Chin, Albert; 光電學院; 電子工程學系及電子研究所; College of Photonics; Department of Electronics Engineering and Institute of Electronics
15-一月-2013How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatmentTsao, Jung-Chih; Liu, Chuan-Pu; Fang, Hsin-Chiao; Wang, Ying-Lang; 光電學院; College of Photonics
15-七月-2007Influences of Ti, TiN, Ta and TaN layers on integration of low-k SiOC : H and CuTsai, Kou-Chiang; Wu, Wen-Fa; Chao, Chuen-Guang; Hsu, Jwo-Lun; Chiang, Chiu-Fen; 材料科學與工程學系; Department of Materials Science and Engineering
2012整合氮化鉭微加熱平台之液相沈積二氧化錫氣體感測器的設計、製作與測試林家揚; 邱俊誠; 電控工程研究所
1998疊層阻障層鈦/氮化鈦及氮化鉭應用於銅金屬化及鋁金屬化之研究蔡國強; Kou-Chiang Tsai; 朝春光; 吳文發; Chuen-Guang Chao; Wen-Fa Wu; 材料科學與工程學系
顯示 1 到 8 筆資料，總共 8 筆