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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2005A comparison of quantum correction models for nanoscale MOS structures under inversion conditionsLi, Y; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-Jan-2017DNA-based nanowires and nanodevicesPandian, Sureshbabu Ram Kumar; Yuan, Chiun-Jye; Lin, Chung-Ching; Wang, Wen-Hung; Chang, Chia-Ching; 生物科技學系; 分子醫學與生物工程研究所; Department of Biological Science and Technology; Institute of Molecular Medicine and Bioengineering
1-May-2006Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era.Lee, JW; Li, YM; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
1-Sep-2005Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETsLi, YM; Chou, HM; Lee, JW; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
1-Dec-2018Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure DevicesSano, Nobuyuki; Yoshida, Katsuhisa; Yao, Chih-Wei; Watanabe, Hiroshi; 電機工程學系; Department of Electrical and Computer Engineering
2004Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETsTang, CS; Yu, SM; Chou, HM; Lee, JW; Li, YM; 交大名義發表; National Chiao Tung University
2005以硒化鎘/硫化鋅與金奈米粒子建構先進之光感測元件張志遠; Chih-Yuan Chang; 吳重雨; 李耀坤; Chung-Yu Wu; Yaw-Kuen Li; 電子研究所
Showing results 1 to 7 of 7