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Issue DateTitleAuthor(s)
1-Jan-2013830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence CharacteristicsHung, Chih-Tsang; Lu, Tien-Chang; 光電工程學系; Department of Photonics
1-May-2003Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wellsLee, HC; Sun, KW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wellsSun, KW; Sun, CK; Wang, JC; Wang, SY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1997Chaotic behavior of hole mixing tunneling in asymmetric coupled quantum wellsJuang, C; Tsai, CB; Juang, J; 應用數學系; Department of Applied Mathematics
1-Feb-1997Chaotic behavior of hole mixing tunneling in asymmetric coupled quantum wellsJuang, C; Tsai, CB; Juang, J; 應用數學系; Department of Applied Mathematics
1-May-2017Diagnosis of GaInAs/GaAsP Multiple Quantum Well Solar Cells With Bragg Reflectors via Absolute ElectroluminescenceZhu, Lin; Yoshita, Masahiro; Tsai, JiaLing; Wang, YiChin; Hong, ChungYu; Chi, GuoChung; Kim, Changsu; Yu, Peichen; Akiyama, Hidefumi; 光電工程學系; Department of Photonics
2001InGaAs/GaAs quantum wells and quantum dots on (111)B orientationTyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Inter- and intra-subband relaxation of hot electrons in GaAs/AlGaAs quantum wellsSun, KW; Huang, CL; Huang, GB; Lee, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Feb-1997Local electric field effects in a SiGe quantum well investigated by photoluminescenceNilsson, S; Penner, U; Schmalz, K; Yassievich, IN; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2018Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb 'W'-Type Quantum Wells Grown on InP SubstrateLi, Zong-Lin; Kang, Yuan-Chi; Lin, Gray; Lee, Chien-Ping; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Photoreflectance characterization of GaNAs/GaAs multiple quantum well structuresLu, CR; Lee, JR; Chen, YY; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics
25-Jan-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
2000Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/AlxGa1-xAs quantum wellsSun, KW; Chang, HY; Wang, CM; Song, TS; Wang, SY; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Role of the spin-orbit interaction in elastic scattering of electrons in quantum wellsHuang, HC; Voskoboynikov, O; Lee, CP; 交大名義發表; National Chiao Tung University
1-Nov-2003Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wellsLee, HC; Sun, KW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Oct-1997Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductorsLiu, DG; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Oct-1997Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductorsLiu, DG; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Spin-dependent delay time in electronic resonant tunneling at zero magnetic fieldVoskoboynikov, O; Liu, SS; Lee, CP; 交大名義發表; National Chiao Tung University
2003Structure effects on inter- and intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa1-xAs/GaAs quantum wellsLee, HC; Sun, KW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum statesYen, ST; Lee, CP; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 23  next >