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公開日期標題作者
1-一月-2001Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodesYang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL; 機械工程學系; Department of Mechanical Engineering
1-二月-2000Electrical properties of Ta2O5 thin films deposited on CuEzhilvalavan, S; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006High-selectivity damascene chemical mechanical polishingChiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2002Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrierYang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP; 機械工程學系; 電子物理學系; Department of Mechanical Engineering; Department of Electrophysics
1-十二月-1995Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applicationsTsai, MH; Sun, SC; Lee, CP; Chiu, HT; Tsai, CE; Chuang, SH; Wu, SC; 應用化學系; 電子工程學系及電子研究所; 奈米中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1999銅金屬化學機械研磨漿料之研究張芳宜; Chang Fangyi; 陳家富; 蔡明蒔; Dr. Chia-Fu Chen; Dr. Ming-Shin Tasi; 材料科學與工程學系
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