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1-七月-2004Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applicationsChang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-一月-2005Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistorChang, SW; Chang, EY; Biswas, D; Lee, CS; Chen, KS; Tseng, CW; Hsieh, TL; Wu, WC; 材料科學與工程學系; Department of Materials Science and Engineering
10-六月-2004InGaP/InGaAs PHEMT with high IP3 for low noise applicationsLin, YC; Chang, EY; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
2-八月-2004Weak localization and electron-electron interaction in disordered V80Al20-xFex alloys at low temperatureBiswas, D; Meikap, AK; Chattopadhyay, SK; Chatterjee, SK; Lin, JJ; 物理研究所; Institute of Physics
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