標題: InGaP/InGaAs PHEMT with high IP3 for low noise applications
作者: Lin, YC
Chang, EY
Chen, GJ
Lee, HM
Huang, GW
Biswas, D
Chang, CY
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
公開日期: 10-六月-2004
摘要: A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
URI: http://dx.doi.org/10.1049/el:20040458
http://hdl.handle.net/11536/26677
ISSN: 0013-5194
DOI: 10.1049/el:20040458
期刊: ELECTRONICS LETTERS
Volume: 40
Issue: 12
起始頁: 777
結束頁: 778
顯示於類別:期刊論文


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