標題: | InGaP/InGaAs PHEMT with high IP3 for low noise applications |
作者: | Lin, YC Chang, EY Chen, GJ Lee, HM Huang, GW Biswas, D Chang, CY 材料科學與工程學系 電子工程學系及電子研究所 友訊交大聯合研發中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics D Link NCTU Joint Res Ctr |
公開日期: | 10-六月-2004 |
摘要: | A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity. |
URI: | http://dx.doi.org/10.1049/el:20040458 http://hdl.handle.net/11536/26677 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el:20040458 |
期刊: | ELECTRONICS LETTERS |
Volume: | 40 |
Issue: | 12 |
起始頁: | 777 |
結束頁: | 778 |
顯示於類別: | 期刊論文 |