InGaP/InGaAs PHEMT with high IP3 for low noise applications
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Date
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DOI
10.1049/el:20040458
Abstract
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.