InGaP/InGaAs PHEMT with high IP3 for low noise applications

標題:	InGaP/InGaAs PHEMT with high IP3 for low noise applications
作者:	Lin, YC Chang, EY Chen, GJ Lee, HM Huang, GW Biswas, D Chang, CY 材料科學與工程學系電子工程學系及電子研究所友訊交大聯合研發中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics D Link NCTU Joint Res Ctr
公開日期:	10-Jun-2004
摘要:	A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IN was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
URI:	http://dx.doi.org/10.1049/el:20040458 http://hdl.handle.net/11536/26677
ISSN:	0013-5194
DOI:	10.1049/el:20040458
期刊:	ELECTRONICS LETTERS
Volume:	40
Issue:	12
起始頁:	777
結束頁:	778
Appears in Collections:	Articles

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