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公開日期標題作者
12-九月-1991BOLOMETRIC YBA2CU3O7-X INFRARED DETECTORTSENG, TY; CHANG, CY; HAUNG, CJ; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1992CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSITSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1988A CONTROLLED RADIATION SOURCE AND ELECTRON X-RAY FLUX RATIOS IN AN ELECTRON-BEAM METAL EVAPORATORBHATTACHARYA, PK; REISMAN, A; CHEN, MC; 交大名義發表; National Chiao Tung University
1-四月-1994COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANECHIOU, JC; CHEN, YJ; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALINGTSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1994DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALINGCHEN, BS; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1993EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURETSUI, BY; TSAI, JY; WU, TS; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1984EFFECT OF LASER GETTERING SCHEME IN SILICONLIOU, JY; LIN, JM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1981EFFECT OF POLY-SI GETTERING SCHEME ON THE QUALITY OF SI EPITAXIAL FILMCHEN, MC; LEE, JY; WU, HJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGSYEH, WK; TSAI, MH; CHEN, SH; CHEN, MC; WANG, PJ; LIU, LM; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGSYEH, WK; TSAI, MH; CHEN, SH; CHEN, MC; WANG, PJ; LIU, LM; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1993ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF TI CONTACTS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1993EVALUATION OF INSITU FORMED W-TI AND MOSI2 AS A DIFFUSION BARRIER TO AL FOR COSI2 SILICIDED CONTACTYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1990FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTIONTSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-1990FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILMTSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-四月-1992FORMATION OF BILAYER SHALLOW MOSI2/COSI2 SALICIDE CONTACT USING W/CO-MO ALLOY METALLIZATIONYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1991FORMATION OF COBALT SILICIDE UNDER A PASSIVATING FILM OF MOLYBDENUM OR TUNGSTENYANG, FM; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十一月-1992FORMATION OF COBALT-SILICIDED P+N JUNCTIONS USING IMPLANT THROUGH SILICIDE TECHNOLOGYCHEN, BS; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1993FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILMCHEN, BS; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-四月-1991FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALINGTSUI, BY; TSAI, JY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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