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公開日期標題作者
9-五月-19942-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAASCHENG, TM; CHANG, CY; CHIN, A; HUANG, MF; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
10-十月-1994SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIESCHIN, A; HSIEH, KY; LIN, HY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-十二月-1995SPONTANEOUSLY FORMED LONG-RANGE AL-RICH AND GA-RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND OPTICAL-PROPERTIES ENHANCEMENT IN (111)A ALGAASCHIN, A; LIN, BC; GU, GL; HSIEH, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-三月-1994STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHIN, A; CHANG, CY; HUANG, MF; HSIEH, KY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-1995STRONG ENHANCEMENT OF THE OPTICAL AND ELECTRICAL-PROPERTIES, AND SPONTANEOUS FORMATION OF AN ORDERED SUPERLATTICE IN (111)B ALGAASCHIN, A; LIN, HY; HSIEH, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-十月-1993STRONG LUMINESCENCE INTENSITIES IN AL0.22GA0.78AS GROWN ON MISORIENTED (111)B GAASCHIN, A; CHENG, TM; PENG, SP; OSMAN, Z; DAS, U; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 6 筆資料，總共 6 筆