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公開日期標題作者
11-九月-2017An Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire DeviceShellaiah, Muthaiah; Chen, Tin Hao; Simon, Turibius; Li, Liang-Chen; Sun, Kien Wen; Ko, Fu-Hsiang; 材料科學與工程學系; 應用化學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-七月-2011Anomalous optical magnetic shift of self-assembled GaSb/GaAs quantum dotsLin, Ta-Chun; Li, Liang-Chen; Lin, Sheng-Di; Suen, Yuen-Wuu; Lee, Chien-Ping; 電子工程學系及電子研究所; 奈米科技中心; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
15-十一月-2013A compact biological cell irradiation system with a Van de Graaff acceleratorCho, I. C.; Niu, H.; Chen, C. H.; Chou, W. T.; Yu, Y. C.; Hsu, C. H.; 奈米科技中心; 友訊交大聯合研發中心; Center for Nanoscience and Technology; D Link NCTU Joint Res Ctr
1-九月-2017Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSnJheng, Li Sian; Li, Hui; Chang, Chiao; Cheng, Hung Hsiang; Li, Liang Chen; 奈米科技中心; Center for Nanoscience and Technology
1-一月-2008Connecting interface for modularization of digital microfluidicsYang, Hanping; Fan, Shib-Kang; Hsu, Wensyang; 機械工程學系; 奈米科技中心; Department of Mechanical Engineering; Center for Nanoscience and Technology
1-二月-2009Correlated Electric Fluctuations in GaN Nanowire DevicesLi, L. C.; Huang, S. Y.; Wei, J. A.; Suen, Y. W.; Lee, M. W.; Hsieh, W. H.; Liu, T. W.; Chen, C. C.; 奈米科技中心; Center for Nanoscience and Technology
1-一月-2018Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffractionCheng, Hui-Wen; Lin, Chien-Hung; Lee, Chien-Ping; 電機學院; 電子工程學系及電子研究所; 奈米科技中心; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-二月-2019Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial LayerTsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
15-十二月-2011DNA double-strand breaks induced along the trajectory of particlesCho, I. C.; Niu, H.; Chen, C. H.; Yu, Y. C.; Hsu, C. H.; 奈米科技中心; 友訊交大聯合研發中心; Center for Nanoscience and Technology; D Link NCTU Joint Res Ctr
1-三月-2008Edge magnetoplasma excitations in quantum wire arraysHsieh, W. H.; Suen, Y. W.; Lee, B. C.; Li, L. C.; Lee, C. P.; 電子工程學系及電子研究所; 奈米科技中心; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
14-三月-2019Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting LasersLi, Zong-Lin; Lin, Shen-Chieh; Lin, Gray; Cheng, Hui-Wen; Sun, Kien-Wen; Lee, Chien-Ping; 應用化學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
28-四月-2014Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wellsLin, Y. M.; Chen, C. H.; Lee, C. P.; 電子工程學系及電子研究所; 奈米科技中心; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-六月-2005The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETsYu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
11-三月-2019Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire DeviceShellaiah, Muthaiah; Chen, Ying-Chou; Simon, Turibius; Li, Liang-Chen; Sun, Kien Wen; Ko, Fu-Hsiang; 材料科學與工程學系; 應用化學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
1-三月-2006Effect of the orientation of CdSe nanorods on the electron mobility of CdSe/P4VP nanodomains self-assembled within a poly(styrene-b-(4)-vinyipyridine) diblock copolymer thin filmLi, CP; Yeh, SW; Chang, HC; Huang, JY; Wei, KH; 材料科學與工程學系; 光電工程學系; 奈米科技中心; Department of Materials Science and Engineering; Department of Photonics; Center for Nanoscience and Technology
16-六月-2014Electrical characteristics of Ni Ohmic contact on n-type GeSnLi, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W.; 奈米科技中心; Center for Nanoscience and Technology
1-四月-2006Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETsKao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
15-十二月-2010Electron delocalization of tensily strained GaAs quantum dots in GaSb matrixLin, T. C.; Wu, Y. H.; Li, L. C.; Sung, Y. T.; Lin, S. D.; Chang, L.; Suen, Y. W.; Lee, C. P.; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米科技中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
11-六月-2012Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealingChen, C. H.; Niu, H.; Yan, D. C.; Hsieh, H. H.; Lee, C. P.; Chi, C. C.; 奈米科技中心; Center for Nanoscience and Technology
1-七月-2005Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devicesWang, YQ; Chen, JH; Yoo, WJ; Yeo, YC; Yeo, YC; Chin, A; Du, AY; 奈米科技中心; Center for Nanoscience and Technology
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